Power Semiconductors: The BJT, MOSFET, and IGBT (6)

VI. CONCLUSION

Whereas all of the mentioned devices have certain advantages, the IGBT has proven to make the best use of all of these advantages while minimizing the disadvantages. As such, IGBTs have taken over in popularity and are now being even further optimized to suit the needs of an ideal power semiconductor.

REFERENCES
[1] Vrej Barkhordarian, “Power MOSFET Basics”, (International Rectifier, 2004), http://www.irf.com/technical-info/appnotes/mosfet.pdf.
[2] B. Jayant Baliga, Modern Power Devices (Krieger Publishing, Malabar, Florida, 1987), Chap. 1.
[3] “IGBT Fundamentals,” (Seimens Semiconductor Group, 2004), http://www.infineon.com/cmc_upload/migrated_files/document_files/Application_Notes/lh_ap_18.pdf.
[4] Fraidoon Mazda, Power Electronics Handbook (Newnes, Oxford, 1997), Chap. 1.
[5] D.A. Grant, “Power semiconductors-innovation and improvement continue to challenge the designer,” in New Developments in Power Semiconductor Devices, IEE Colloquium on, May 1991.
[6] “Main Applications for Power Modules,” (Mitsubishi Electronics, Sept. 1998), http://www.mitsubishichips.com/webfiles/pdf/powermos2_0.pdf.

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